By B. K. Vainshtein (auth.), E. I. Givargizov (eds.)
The current quantity keeps the culture of the previous volumes. masking a variety of crystal development difficulties and treating points of serious significance for crystalliza tion. alterations during this box of information have. in spite of the fact that, replaced the factors for collection of papers for inclusion during this sequence. The expanding function of crystals in technological know-how and know-how is much more obvious this day. The research and usage of those hugely excellent gadgets of nature significantly allows development within the physics and chemistry of solids. quantum electronics, optics, microelectron ics, and different sciences. The call for for crystals and crystal units has grown gradually and has ended in the emergence and quick development of the only crystal (we can thoroughly saythat the nation ofthe paintings during this is indicative ofthe total clinical and technolo- cal power of a country). even as, the advent of crystallization recommendations into different industries is gaining ever-increasing value. to demonstrate this final kingdom ment, we will be able to point out the fabrication of textured structural fabrics and direct tools of steel aid in ores by utilizing chemical vapor shipping suggestions. Crystallization tech ll niques development either in "width" and in "depth : conventional equipment are modernized. and novel thoughts seem, a few of them on the junction of the already latest applied sciences (for instance, flux progress of crystals, progress from vapor with participation of the liquid part, and so forth. ).
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Additional resources for Growth of Crystals: Volume 13
Moreover, temperature dependences give information on the energy distribution between the processes; however, data for the rate limiting stage are required to interpret the values of the activation energy obtained. With these arguments in mind, let us discuss the experimental results. Anisotropy of Growth Rate and the Structure of Growth Surfaces of Gallium Arsenide Homo-epitaxial Layers Systematic investigations of growth rate anisotropy and the structure of growth surfaces of gallium arsenide homo-epitaxial layers have been carried out for a number of gas transport systems under various experimental conditions, in the range of crystallographic orientations (l11)A, B to (100) [1, 8-10].
Anisotropy of gallium arsenide layered growth rate in different systems: (1) GaAs-AsC1 3 H2 ; (2, 3) Ga-AsC1 3 H2 (two series of experiments); (4) GaAs-I 2 H2 ; (5) GaAs-HI-H 2 • 30 ~ ':bO 20 ~ 10 0 110 20 0 20 110 L. G. LAVRENTYEVA, I. V. IVONIN, AND L. P. Lm . Lm Fig. 2. Morphology of (100) gallium arsenide layers grown in systems (a) GaAs-I 2 -H 2 and (b, c) GaAs-AsC1 3 -H 2 • 37 38 L. G. LAVRENTYEVA, I. V. IVO NI N, AND L. P. POROKHOVNICHENKO 2. The structure of surfaces belonging to the C range is more sensitive to growth conditions.
Effect of AsCl 3 and BBr 3 impurities on the mechanism of CVD growth of autoepitaxial germanium layers. Summary of the Dissertation, Moscow, Institute of Crystallography (in Russian) (1974). D. Shaw. Mechanisms in vapor epitaxy of semiconductors. In: Crystal Growth, Theory and Techniques, vol. 1, ed. L. Goodman. Plenum Press, London-New York, 1-48 (1974). R. Wagner. Vapor-Liquid-Solid Mechanism of crystal growth. In: Whisker Technology, ed. A. P. LeviU. Wiley, New York, 147-219 (1970). V. V. Voronkov.