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Extra resources for Integrated electronics
1525-1529, J~ne, 1954. Morin, F. , and J. P. Maita: Electrical Properties of Silicon Containing Arsenic and Boron, Phys. , vol. 96, pp. 28-35, October, 1954. - 4. Sze, S. : t'Physics of Semiconductor Devices," Fig. 29, p. , New York, 1969. 2-J3 TRANSPORT PHENOMENA IN SEMICONDUCTORS ~ 5. , and W. T. Q.. Electrons, Phys. , vol. 87, pp. 835-842, September, 1952. Hall, R. : Electron-Hole Recombination in Germanium, Phys. , vol. 87, p. 387, July, 1952. 6. Collins, C. , R. O. Carlson, and C. J. Gallagher: Properties of Gold-doped Silicon, Phys.
3-5 The minority (solid) and the majority -··------ --7---. _" _. f:o~l. ~~~e_n~~ " electron "<4i-I",,, " (dashed) currents vs. distance in a p-n diode. It is assumed that no recombina- , , tion takes place in the very narrow depletion region. / I np , electron diffusion current I I I current Ipo. hole diffusion current I f---- n region Distance Since the thermal-equilibrium concentrations Pno and npo depend upon temperature T, then 1 is a function of T. This temperature dependence is derived in Sec.
Vol. 87, pp. 835-842, September, 1952. Hall, R. : Electron-Hole Recombination in Germanium, Phys. , vol. 87, p. 387, July, 1952. 6. Collins, C. , R. O. Carlson, and C. J. Gallagher: Properties of Gold-doped Silicon, Phys. , vol. 105, pp. 1168-1173, February, 1957. : Recombination Properties of Gold in Silicon, Phys. , vol. 111, pp. 1515-1518, September, 1958. 7. Gray, P. , and C. L. , New York 1969. REVIEW QUESTIONS 2-1 Give the electron-gas description of a metal. 2-2 (a) Define mobility. (b) Give its dimensions.