By Marcio C. Schneider
This can be the 1st e-book devoted to the following iteration of MOSFET types. Addressed to circuit designers with an in-depth remedy that appeals to equipment experts, the ebook offers a clean view of compact modeling, having thoroughly deserted the nearby modeling method.
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Additional info for MOSFET modeling for circuit analysis and design
5) 9 Chapter 2. 6) where u = φ / φt is the normalized electrostatic voltage and φt = kT / q is the thermal voltage. The charge density inside the semiconductor results from an imbalance between positive and negative charges. Four types of charges, electrons, holes, ionized acceptors (negatively charged) and ionized donors (positively charged) must be considered (Appendix B). 7) where ND and NA are the ionized donor and acceptor densities, respectively. 4). 2 The field effect in bulk semiconductors Field effect is the name given to the experiment in which an electric field is applied to the surface of a semiconductor.
16 Three terminal MOS structure on a p-type substrate and energy bands. The n+p-substrate junction is reverse biased. The gate is biased at (a) flat-band, (b) depletion, and (c) inversion. ) VP is the pinch-off voltage (see Eq. 49)) and Wd(m) is the depletion width. 1 Quasi-equilibrium electron and hole concentrations The quasi-Fermi potentials φ p for holes and φn for electrons are defined in terms of carrier concentrations (p and n) and potential φ. In order to write the concentrations under non-equilibrium conditions, preserving the form of the Boltzmann equilibrium expressions, one simply replaces 33 Chapter 2.
83114, July 1995.  Josef Watts, Colin McAndrew, Christian Enz, Carlos Galup-Montoro, Gennady Gildenblat, Chenming Hu, Ronald van Langevelde, Mitiko Miura-Mattausch, Rafael Rios, Chih-Tang Sah, “Advanced compact models for MOSFETs,” Proc. Workshop on Compact Modeling, Nanotech 2005, pp. 3-12. Chapter 2 The MOS Capacitor The metal-oxide-semiconductor (MOS) structure is the core of the MOS technology. The two-terminal structure is called the MOS capacitor and as a stand-alone device it plays a fundamental role in technology characterization and parameter extraction.